Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1996-09-12
1999-10-05
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
2503384, 25037001, 257446, 257621, 257773, 257774, H01L 2900, H01L 3100, H01L 2940, H01L 2348
Patent
active
059629096
ABSTRACT:
The microbridge structure comprises a substrate layer provided with two first electrical contacts, a microstructure provided with two second electrical contacts, and a micro support for suspending the microstructure over and at a predetermined distance from the substrate layer. The micro support extends along a vertical axis. The micro support has a central upper cavity extending along the vertical axis within the micro support. The micro support has a lower end connected to the substrate layer and an upper end connected to the microstructure for supporting the microstructure with respect to the substrate layer. The micro support is a multilayer micro support comprising two conductive paths and a layer made of dielectric material. The conductive paths and the layer of the micro support extend from the upper end to the lower end thereof. The two conductive paths connect respectively the two first contacts to the two second contacts. The present invention is also concerned with a method for forming a microstructure suspended by a micro support.
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Jerominek Hubert
Renaud Martin
Swart Nicholas R.
Institut National D'Optique
Saadat Mahshid
Wilson Allan R.
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