Magnetoresistive element

Details Magnetoresistive element Magnetoresistive element

1997-09-16

1999-10-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

257422, 257423, 257427, H01L 2982, H01L 4300

Patent

active

059629053

ABSTRACT:
A magnetoresistive element comprises an n-type emitter layer, a p-type base layer, and an n-type collector layer, the three layers being so arranged as to form a pn-junction with each other, an emitter ferromagnetic layer formed in contact with the n-type emitter layer, a base ferromagnetic layer formed in contact with the p-type base layer, a power source for applying, by way of the emitter ferromagnetic layer, a forward bias voltage between the n-type emitter layer and the p-type base layer, a power source for applying a backward bias voltage to the n-type collector layer and the p-type base layer and a power source for applying, by way of the base ferromagnetic layer, a bias voltage so as to inject minority carriers into the p-type base layer.

REFERENCES:
patent: 4700211 (1987-10-01), Popvoc et al.
patent: 5262666 (1993-11-01), Yoshino et al.
patent: 5329480 (1994-07-01), Wu et al.
patent: 5416353 (1995-05-01), Kamiguchi et al.
I. Solomon, "Spin-Dependent Recombination in a Silicon p-n Junction", Solid State Communications, vol. 20, pp. 215-217, 1976.
Supriyo Data et al, "Electronic Analog of the Electro-Optic Modulator", Appl. Phys. Lett. 56(7), pp. 665-667, Feb. 12, 1990.

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