Short channel MOS devices and the method of manufacturing same

Details Short channel MOS devices and the method of manufacturing same Short channel MOS devices and the method of manufacturing same

1978-04-19

1980-09-30

Wojciechowicz, Edward J.

357 4, H01L 2978

Patent

active

042258758

ABSTRACT:
A short channel MOS transistor and the method for fabricating same is described wherein the dopant concentrations of the source and drain regions are maintained at different levels of conductivity modifiers. The method described teaches first doping the source region while maintaining the drain region masked and then doping both the source and drain regions.

REFERENCES:
patent: 4089712 (1978-05-01), Joy et al.
patent: 4124933 (1978-11-01), Nicholas

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