Multilayer semi-insulating film for hermetic wafer passivation a

Details Multilayer semi-insulating film for hermetic wafer passivation a Multilayer semi-insulating film for hermetic wafer passivation a

1986-04-02

1990-02-13

Carroll, J.

357 2, 357 52, 357 59, H01L 4500, H01L 2934, H01L 2904

Patent

active

049011332

ABSTRACT:
A film for hermetically passivating monocrystalline silicon includes sequential layers of undoped amorphous silicon, oxygen doped polycrystalline silicon, silicon rich oxynitride, and silicon nitride, and may be overlaid with an organic bulk dielectric such as polyimide. The inorganic film accurately sets the monocrystalline surface Fermi potential, independent of ambient electrical, mechanical, thermal, ionic, and moisture conditions. A method for depositing the amorphous silicon and the oxygen doped polycrystalline silicon layers of the film includes sequentially reacting monosilane in an inert carrier gas, such as helium or argon, and nitrous oxide. The layers are blended by varying the deposition temperature, the nitrous oxide flow rate, the monosilane flow rate, the monosilane dilution, and the inert carrier gas species. The layers are annealed to locally segregate the oxygen, to grow the grains to the proper size, and to set the final recombination velocity of the monocrystalline region.

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patent: 4274252 (1979-11-01), Kressel et al.
patent: 4508749 (1985-04-01), Brannon et al.

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