Patent
1989-01-31
1990-02-13
James, Andrew J.
357 22, 357 35, 357 36, 357 37, 357 38, 357 41, 357 46, H01L 2702, H01L 2980, H01L 2972
Patent
active
049011324
ABSTRACT:
A semiconductor device is primarily composed of a semiconductor substrate of a first conductivity type and a semidonductor layer of a second conductivity type formed in a principal plane of the semiconductor substrate. The device has both a bipolar transistor with the semiconductor layer itself being the collector region. The base region is of the first conductivity type and the emitter region is of the second conductivity type. Both regions are formed in the same layer as a JFET struture which includes the above collector region as channel a and the above base region as a gate. A semiconductor region of the first conductivity type is formed in the above semiconductor layer, the semiconductor layer itself, and the above base and emitter regions constitute a thyristor structure.
REFERENCES:
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IEEE Trans. ELec. Dev., vol. ED-29, no. 2, 2/82, pp. 341-343 T. E. Zipperian , et al.
IEEE Intnatl Solid-State Circuit Conf., vol. 24, 2/81, pp. 40-41 Werner, et al.
Hiller William E.
James Andrew J.
Merrett N. Rhys
Ngo Ngan Van
Sharp Mel
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