Protection thyristor with auxiliary gate

Details Protection thyristor with auxiliary gate Protection thyristor with auxiliary gate

1988-07-01

1990-02-13

Hille, Rolf

357 20, 357 39, H01L 2974, H01L 2906, H01L 29747

Patent

active

049011308

ABSTRACT:
The instant invention relates to protection semiconductive components, thrystors or triacs. Those components do not usually comprise gate electrodes and are triggered by an overvoltage between the main electrodes. When one wishes to obtain however a gate triggering, the invention provides for a structure with a narrowed region of the gate (part D) and an overdoped central region (22) below a portion of the emitter (18). With this structure, one avoids to have a too high gate current to trigger the thyristor and a too low hold current once it is triggered.

REFERENCES:
patent: 3315138 (1967-04-01), Allison
patent: 3697827 (1972-10-01), Simon
patent: 4156248 (1979-05-01), Neilson
patent: 4314266 (1982-02-01), Temple
patent: 4618781 (1986-10-01), Silber et al.

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