Bulk charge modulated transistor threshold image sensor elements

Details Bulk charge modulated transistor threshold image sensor elements Bulk charge modulated transistor threshold image sensor elements

1989-03-23

1990-02-13

James, Andrew J.

357 231, 357 2312, 357 24, 357 41, 357 45, 357 47, H01L 2714, H01L 2918, H01L 2702

Patent

active

049011294

ABSTRACT:
A bulk charge modulated transistor threshold sensing element (12) comprises a first region (18) having an enclosed structure, a gate region (24) that is preferably generally endless in shape, and a second region (26) to the interior of the gate region (24). The gate region (24) is doped and biased such that a potential well (100) is formed in the semiconductor substrate (11) a substantial distance from the surface thereof. When light (90) impinges on the element of the invention, carriers (94) collect in the potential well (100) in response thereto. The carriers (94) affect the threshold voltage of the transistor sensor element, and a threshold voltage differential is sensed as the sensing signal.

REFERENCES:
patent: 4148046 (1979-04-01), Hendrickson et al.
patent: 4240093 (1980-12-01), Dingwall
patent: 4242694 (1980-12-01), Koika et al.
patent: 4460912 (1984-07-01), Takeshita et al.
patent: 4471387 (1984-09-01), Nadler
patent: 4527182 (1985-07-01), Ishihara et al.
patent: 4562474 (1985-12-01), Nishizawa
patent: 4598305 (1986-07-01), Chiang et al.

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