Structure for fast-recovery bipolar devices

Details Structure for fast-recovery bipolar devices Structure for fast-recovery bipolar devices

1987-06-10

1990-02-13

Mintel, William A.

357 34, 357 45, 357 43, 357 52, 357 36, H01L 2948

Patent

active

049011200

ABSTRACT:
A bipolar junction structure comprising a Schottky barrier rectifying contact juxtaposed to a p-n junction having the distribution of p+ diffusions common to a guard ring structure on the Schottky barrier area.

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Shimizu et al., "High-Speed Low-Loss p-n Diode Having a Channel Structure," IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984, pp. 1314-1319.
Amemiya et al., "Novel Low-Loss and High-Speed Diode Utilizing an `Ideal` Ohmic Contact," IEEE Transactions on Electron Devices, vol. ED-29, No. 2, Feb. 1982, pp. 236-243.
Zeidenbergs, IBM Technical Disclosure Bulletin, vol. 14, No. 4, Sep. 1971, p. 1104, "Multiemitter Schottky Barrier Transistor with Negligible Emitter-to-Emitter Gain".
Brill et al., "Power Transistor with Reduced Minority Carrier Storage," IBM Technical Disclosure Bulletin, vol. 19, No. 10, Mar. 1977, pp. 3787-3788.
Baliga, "The Pinch Rectifier: A Low-Forward-Drop High-Speed Power Diode," IEEE Electron Device Letters, vol. EDL-5, No. 6, Jun. 1984, pp. 194-196.
Hower et al., "Schottky Rectifiers for Low-Voltage Outputs," APEC Meeting, New Orleans, Apr. 1986, Unitrode Corp., Watertown, MA., pp. 1-10.

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