Structure and method for contacts in CMOS devices

Details Structure and method for contacts in CMOS devices Structure and method for contacts in CMOS devices

1991-06-24

1992-11-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437240, 437245, 148DIG133, H01L 2102, H01L 21465

Patent

active

051643405

ABSTRACT:
The method for fabrication of openings in semiconductor devices to improve metal step coverage includes forming an active region over a substrate. A metal oxide layer is then formed over the source/drain region. An insulating layer is formed over the metal oxide layer. A photoresist layer is formed over the insulating layer, and patterned to form an opening, exposing a portion of the insulating. The insulating layer is then etched to expose a portion of the metal oxide layer. The photoresist layer is removed and the insulating layer is reflowed so as to form rounded corners at the opening of the insulating layer. The exposed portion of the metal oxide layer is removed to expose a portion of the active region.

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