Thin film resistor material and method

Details Thin film resistor material and method Thin film resistor material and method

1983-02-14

1985-04-09

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

204192R, 204192F, 427101, 427102, 427103, H01C 1712

Patent

active

045101787

ABSTRACT:
Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.

REFERENCES:
patent: 3381255 (1968-04-01), Youmans
patent: 3477935 (1969-11-01), Hall
patent: 3847658 (1974-11-01), Kumagai
patent: 4042479 (1977-08-01), Yamazaki
patent: 4079349 (1978-03-01), Dorfeld
patent: 4217570 (1980-08-01), Holmes
patent: 4288776 (1981-09-01), Holmes
patent: 4298505 (1981-11-01), Dorfeld

Affiliated with

Also associated with

Rating

Thin film resistor material and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film resistor material and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film resistor material and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1169589