Method of forming an oxide liner and active area mask for select

Details Method of forming an oxide liner and active area mask for select Method of forming an oxide liner and active area mask for select

1989-04-24

1990-02-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 90, H01L 2182

Patent

active

049006924

ABSTRACT:
A new method is used to fabricate an isolation trench to prevent spurious epitaxial growth at the top edge of the trench opening and at pin holes in oxide over the active area. The method involves etching a deep trench into a semiconductor wafer that is patterned with a mask oxide layer, and then depositing a low temperature oxide, followed by growing a thermal oxide layer under the mask oxide and in the trench. When the oxide at the bottom of the trench is removed to provide a seed for the growth of selective epitaxial silicon, an oxide layer thick enough to leave a protective coating over the active area and at the trench opening is provided which prevents spruious epitaxial silicon growth.

REFERENCES:
patent: 4820654 (1989-04-01), Lee

Affiliated with

Also associated with

Rating

Method of forming an oxide liner and active area mask for select does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an oxide liner and active area mask for select, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an oxide liner and active area mask for select will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1167915