Pseudo uniphase charge coupled device fabrication by self-aligne

Details Pseudo uniphase charge coupled device fabrication by self-aligne Pseudo uniphase charge coupled device fabrication by self-aligne

1989-04-03

1990-02-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 30, 437 41, 437 53, H01L 21265, H01L 2978, G11C 1928

Patent

active

049006886

ABSTRACT:
A pseudo uniphase CCD array having four functional regions, a clocked barrier region, a clocked well region, a virtual barrier region, and a gate variable potential well region per stage. The described structure allows flexibility in setting operating voltages and avoids the breakdown and fabrication difficulties of a virtual well region. The device employs a virtual barrier plus adjacent MOS well fixed potential region and uses clocking of barrier and well regions to achieve charge transfer. A fabrication sequence and operating potential selection criteria are also included.

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