Process for forming a magnetic field sensor

Details Process for forming a magnetic field sensor Process for forming a magnetic field sensor

1989-04-03

1990-02-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 38, H01L 2722

Patent

active

049006878

ABSTRACT:
A magnetic sensor is formed by a diode that includes a silicon element whose bulk is of high resistivity and low recombination velocity material and which includes spaced apart on its top surface n-type and p-type zones to which are provided electrical terminals. The element is treated to form at the top surface regions of high recombination velocity so located that when a voltage is applied between the electrical terminals to establish a flow of minority charge carriers between the p-type and n-type zones, such flow, in the absence of an applied magnetic field to be sensed, is little affected by the surface regions of high recombination velocity, but in the presence of any such field, is deflected into such surface regions and extinguished. Advantagously, the surface regions are formed by etching to form grooves and then ion implanting the grooved regions.

REFERENCES:
patent: 3714523 (1973-01-01), Bate
patent: 3747201 (1973-07-01), Hrai
IBM Tech. Disclosure Bulletin, vol. 28, No. 9, Feb. 1986, pp. 4074-4076.
Cristoloveanu et al., "Magnetodiodes on Silicon on Sapphire: A New Kind of Microelectronics Magnetic Sensors", 4th European Conference on Electro Technics, pp. 657-659, Germany 24-28, Mar. 1980.

Affiliated with

Also associated with

Rating

Process for forming a magnetic field sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming a magnetic field sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming a magnetic field sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1167813