1988-12-29
1990-12-25
Hille, Rolf
357 4, 357 16, 357 22, H01L 2904
Patent
active
049807501
ABSTRACT:
A novel structure of semiconductor crystal of compound semiconductor material has a plurality of unit layers stratified periodically on a substrate. Each unit layer comprises at least one first semiconductor layer consisting of a first atom mono layer of a first element and a second atom mono layer of a second element, the first and second atom mono layers being stratified one over another alternately in a first deposition order, and at least one second semiconductor layer consisting of the first atom mono layer and the second atom mono layer which are stratified one over another alternately in the reverse deposition order with respect to the first deposition order of the first semiconductor layer.
REFERENCES:
patent: 3146137 (1964-08-01), Williams
patent: 3209215 (1965-09-01), Esaki
patent: 3764424 (1973-10-01), Sayko
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4261771 (1981-04-01), Dingle et al.
patent: 4603340 (1986-07-01), Dil
patent: 4605945 (1986-08-01), Katayama et al.
patent: 4675708 (1987-06-01), Onabe
patent: 4807001 (1989-02-01), Hida
patent: 4835583 (1989-05-01), Morioka et al.
"Metalorganic Chemical . . . Superlattices", Roentgen et al., May 1st 1985, J. Appl. Phys. 58 (4).
"Role of the Piezoelectric Effect in Device Uniformity of GaAs Integrated Circuits", Chang et al., Applied Physics Letters 45(3), pp. 279-281, (Aug. 1, 1984).
"Comparison of the Orientation Effect of SiO.sub.2 -- and Si.sub.3 N.sub.4 -- Encapsulated GaAs MESFET's", Ohnishi et al., IEEE Electron Device Letters, vol. EDL-6, No. 4, pp. 172-174, (Apr. 1985).
"Piezoelectric Effects in GaAs FET's and Their Role In Orientation-Dependent Device Characteristics", Asbeck et al., IEEE Transactions of Electron Devices, vol. ED-31, No. 10, pp. 1377-1380 (Oct. 1984).
"Improvement in GaAs MESFET Performance Due to Peizoelectric Effect", Onodera et al., IEEE Transactions on Electronic Devices, vol. ED-32, No. 11, pp. 2314-2318 (Nov. 1985).
Hille Rolf
NEC Corporation
Tran Minh Loan
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