Conductivity-modulation metal oxide semiconductor field effect t

Details Conductivity-modulation metal oxide semiconductor field effect t Conductivity-modulation metal oxide semiconductor field effect t

1988-02-25

1990-12-25

Hille, Rolf

357 234, H01L 29747, H01L 29100

Patent

active

049807439

ABSTRACT:
A conductivity-modulation MOSFET employs a substrate of an N type conductivity as its N base. A first source layer of a heavily-doped N type conductivity is formed in a P base layer formed in the N base. A source electrode electrically conducts the P base and the source. A first gate electrode insulatively covers a channel region defined by the N.sup.+ source layer in the P base. A P drain layer is formed on an opposite substrate surface. An N.sup.+ second source layer is formed in a P type drain layer by diffusion to define a second channel region. A second gate electrode insulatively covers the second channel region, thus providing a voltage-controlled turn-off controlling transistor. A drain electrode of the MOSFET conducts the P type drain and second source. When the turn-off controlling transistor is rendered conductive to turn off the MOSFET a "shorted anode structure" is temporarily formed wherein the N type base is short-circuited to the drain electrode, whereby case, the flow of carriers accumulated in the N type base into the drain electrode is facilitated to accelerate dispersion of carriers upon turn-off of the transistors.

REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4364073 (1982-12-01), Becke et al.
patent: 4509089 (1985-04-01), Svedberg
patent: 4558243 (1985-12-01), Schotten et al.
patent: 4589004 (1986-05-01), Yasuda et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4680604 (1987-07-01), Nakagawa et al.
patent: 4689647 (1987-08-01), Nakagawa et al.
patent: 4794441 (1988-12-01), Sugawara et al.
patent: 4816892 (1989-03-01), Temple
J. Plummer et al., "Insulated-Gate Planar Thyristors", IEEE Trans. on Elec. Dev., vol. ED-27 #2, Feb. 1980, pp. 380-387.
B. Scharf et al., "Insulated-Gate Planar Thyristors . . . ", IEEE Trans. on Elec. Dev., vol. ED-27, #2, Feb. 1980, pp. 387-393.
1983 IEEE IEDM Technical Digest, pp. 79-82, A. M. Goodman et al.
IEEE Trans. on Electron Devices, vol. ED-33, No. 12, pp. 1956-1963, D. N. Pattanayak et al.

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