MOS protection device

Details MOS protection device MOS protection device

1989-02-10

1990-12-25

Hille, Rolf

357 39, 357 234, 357 2313, H01L 2974

Patent

active

049807412

ABSTRACT:
An MOS device, for self-protection from overvoltages and for protection of another circuit or component in some applications, has a semiconductor substrate which includes a drain region with a plurality of base regions disposed therein. Source regions are diffused into at least one of the base regions; at least one base region does not require any source regions and defines a sourceless base region. A diode junction, formed between the sourceless base region and the abutting drain region, undergoes junction breakdown at an avalanche voltage level chosen to cause voltage breakdown to occur between a second electrode and a gate electrode at a lower voltage level than a breakdown voltage level present between the second electrode and the first electrode when the chosen avalanche level is exceeded by a voltage applied to the device or the protected component. A gate electrode contacts the sourceless base region to cause any avalanche current to be conducted to the gate electrode when the chosen avalanche voltage level is exceeded, to enhance a channel between the source region and the drain region to provide a uniform and controlled alternate path for the further device current other than the avalanche current.

REFERENCES:
patent: 4484244 (1984-11-01), Avery
patent: 4546401 (1985-10-01), Svedberg
patent: 4630084 (1986-12-01), Tihanyi
patent: 4686602 (1987-08-01), Bucksch
patent: 4694315 (1987-09-01), Svedberg
patent: 4831424 (1989-05-01), Yoshida et al.

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