MOS-pilot structure for an insulated gate transistor

Details MOS-pilot structure for an insulated gate transistor MOS-pilot structure for an insulated gate transistor

1989-03-27

1990-12-25

Hille, Rolf

357 39, 357 234, 357 41, H01L 2974

Patent

active

049807404

ABSTRACT:
A MOS-pilot structure for an IGT device consisting of a multiplicity of IGT cells interconnected in a lattice network includes a plurality of pilot emitter electrodes each in electrical contact with only at least one pilot emitter region of a first plurality of the multiplicity of IGT cells and electrically isolated from a common cathode electrode of the multiplicity of IGT cells. The plurality of pilot emitter electrodes are each electrically connected to a contact metal strip deposited on the substrate surface and spaced therefrom by a layer of insulation. The contact metal strip is connected to ground potential through a sense resistor for producing a sense voltage responsive only to the channel currents flowing through the at least one pilot emitter regions; therefore, a MOS pilot structure that utilizes only the MOS channel current to produce the sense voltage to cause turn-off of the IGT device at a large total current is disclosed. The MOS-pilot structure does not suffer from the avalanche breakdown problems during turn-off, that are associated with other prior art IGT pilot structures.

REFERENCES:
patent: 4705759 (1987-11-01), Lidow et al.
patent: 4811072 (1989-03-01), Risberg
patent: 4816892 (1989-03-01), Temple
patent: 4823176 (1989-04-01), Baliga et al.
patent: 4857977 (1989-08-01), Temple
patent: 4908682 (1990-03-01), Takahashi

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