Plasma processing apparatus and plasma processing method using t

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118723MP, 118723ME, 118723MR, 118723MA, 20429837, 20429838, 20429816, H05H 100

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active

059617730

ABSTRACT:
A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field. This cusped magnetic field falls steeply from a position of electron cyclotron resonance magnetic field strength to a boundary portion between the electron heating space chamber and the plasma generating space chamber and its direction is reversed to that of the strong magnetic field with decreasing distance from the boundary portion between the electron heating space chamber and the plasma generating space chamber to the plasma generating space chamber. A second static magnetic field generating device is provided with permanent magnets arranged around the plasma generating space chamber. Adjacent ones of the permanent magnets have polarities opposite to each other.

REFERENCES:
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 5370765 (1994-12-01), Dandl
patent: 5517085 (1996-05-01), Engemann et al.
patent: 5620522 (1997-04-01), Ichimura et al.
Journal of Vacuum Science Technology, vol. B9, No. 1, Jan./Feb. 1991, "Characterization of a Permanent Magnet Electron Cyclotron Resonance Plasma Source", T. Mantei et al, pp. 26-33.

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