Semiconductor device having an improved thin film transistor

Details Semiconductor device having an improved thin film transistor Semiconductor device having an improved thin film transistor

1988-10-17

1990-12-25

Hille, Rolf

357 54, 357 42, 357 231, 357 237, 357 59, H01L 2978

Patent

active

049807323

ABSTRACT:
There is disclosed a semiconductor device provided with an improved thin film transistor which is formed on a semiconductor substrate via an insulating layer and which comprises a gate electrode, a semiconductor film, a source region and a drain region formed in the semiconductor film, a junction between the drain region and a channel region being not overlapped with the gate electrode.

REFERENCES:
patent: 4272880 (1981-06-01), Pashley
patent: 4603468 (1986-08-01), Lam
patent: 4619034 (1986-10-01), Janning
patent: 4628589 (1986-12-01), Sundaresan
patent: 4653025 (1987-03-01), Minato et al.
patent: 4654121 (1987-03-01), Miller et al.
patent: 4679299 (1987-07-01), Szluk et al.
patent: 4698659 (1987-10-01), Mitzutani
patent: 4771323 (1988-09-01), Sasaki

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