Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1990-01-09
1990-12-25
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504921, 2504923, 250504R, 313 35, 313 39, H01L 2126
Patent
active
049805630
ABSTRACT:
Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.
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George Edward V.
Mundinger David C.
Oster Yale
Berman Jack I.
Carnahan L. E.
Moser William R.
Nguyen Kiet T.
Sartorio Henry P.
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