Semiconductor device having an antireflective coating

Details Semiconductor device having an antireflective coating Semiconductor device having an antireflective coating

1975-10-02

1976-11-02

Edlow, Martin H.

357 54, 357 59, H01L 2714

Patent

active

039901009

ABSTRACT:
A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.

REFERENCES:
patent: 3743847 (1973-07-01), Boland
patent: 3760240 (1973-09-01), Bergt
patent: 3886587 (1975-05-01), Nicolay
patent: 3900350 (1975-08-01), Appels
patent: 3922774 (1975-12-01), Lindmayer
B535,209, Mar. 1976, Kajiwara, 357/59.
B561,405, Mar. 1975, Janowiecki, 148/174.

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