Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-07-25
1990-12-25
Ryan, Patrick
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
428688, 428699, 428700, 428730, 505701, 505702, 505703, 505704, B32B 100
Patent
active
049803395
ABSTRACT:
A superconductor structure of very high performance is realized by forming a crystalline coating on a substrate of semiconductor, etc. and epitaxially depositing a crystalline superconductor film of good quality on this crystalline coating. Especially, CaF.sub.2 crystal and ZrO.sub.2 crystal of CaF.sub.2 crystal structure have latice constants which match well with the substrate such as Si, GaAs, etc. and the superconductor. The crystalline coating may be a perovskite material such as BaTiO.sub.3 when the superconductor is a perovskite material.
REFERENCES:
R. H. Hammond et al, "Superconducting thin films of the perovskite superconductors by electron beam deposition," Proceedings of Symposium S, Extended Abstracts, High Temperature Superconductors, MRS Pittsburgh, U.S., pp. 169-171, 23rd-24th Apr. 1987.
S. R. Ovshinsky et al, "Superconductivity at 155K," Physical Review Letters, vol. 58, No. 24, New York, U.S.A., pp. 2579-2581, 15th Jun. 1987.
P. Chaudhari et al, "Critical-Current Measurements in Epitaxial Films of YBa2Cu307-x Compound," Physical Review Letters, vol. 58, No. 25, pp. 2584-2686, 22nd Jun. 1987.
Formation of High T.sub.c YBa.sub.2 Cu.sub.3 O.sub.7-8 Films on YaBaCuO5 substrate Jap of Journ. Appl. Phys., vol. 27, No. 7 Jul. 1988, L1268-L1270.
Adachi Hideaki
Higashino Hidetaka
Hirao Takashi
Kamada Takeshi
Setsune Kentaro
Matsushita Electric - Industrial Co., Ltd.
Ryan Patrick
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