Method of producing a semiconductor laser

Details Method of producing a semiconductor laser Method of producing a semiconductor laser

1990-01-05

1990-12-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG15, 148DIG95, 148DIG151, 148DIG160, 372 96, 437110, 437133, 437152, 437161, 437953, 437987, H01L 2120, H01L 2122

Patent

active

049803131

ABSTRACT:
A method of producing a semiconductor laser including deposition a first film as a source of n type impurities on a portion of a semiconductor structure produced by growing at least a p type lower cladding layer, a quantum well active layer, and an n type upper cladding layer successively on a substrate, depositing a second film as a source of p type impurities at least on the surface of the semiconductor structure on both sides of and on the first film and annealing to diffuse p and n type impurities at the same time, thereby disordering portions of the quantum well except for the portion becoming an active region with p type impurities reaching at least the p type lower cladding layer, n type impurities reverting the portions of the n type cladding layer to which p type impurities have diffused to n type, and the n type impurities reaching the n type cladding layer but not reaching the active layer.

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