Fishing – trapping – and vermin destroying
Patent
1988-11-23
1990-12-25
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 72, H01L 21302
Patent
active
049803115
ABSTRACT:
A semiconductor device and method of fabrication thereof includes both narrow and wide element isolation regions which have been fabricated employing a trench isolation technique. The technique allows for the production of wide element isolation regions in submicron semiconductor devices wherein the entire wide element isolation region is covered with an insulating material.
REFERENCES:
patent: 4222792 (1980-09-01), Lever et al.
patent: 4394196 (1983-07-01), Iwai
patent: 4396460 (1983-08-01), Tamaki et al.
patent: 4435446 (1984-03-01), Marston et al.
patent: 4472459 (1984-09-01), Fisher
patent: 4477310 (1984-10-01), Park et al.
patent: 4660068 (1987-04-01), Sakuma et al.
patent: 4666556 (1987-05-01), Fulton et al.
patent: 4859615 (1989-08-01), Tsukamoto et al.
patent: 4876217 (1989-10-01), Zoebel
"Recessed Oxide Isolation Process", IBM Technical Disclosure Bulletin, vol. 20, No. 1, Jun. 1977, pp. 144-145.
"Method for Making Three-Dimensional Microstructures . . . ", J. M. Blum et al., IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979, pp. 3814-3817.
Chaudhuri Olik
Fourson George R.
Seiko Epson Corporation
LandOfFree
Method of fabricating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1162567