Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-09-09
1985-04-09
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29577C, H01L 2198, H01L 21223, H01L 21265
Patent
active
045092508
ABSTRACT:
In the process according to the invention, in addition to the conventional two photoresist processes for opening the contact holes and for manufacturing the interconnecting pattern, two photoresist processes are used with one photoresist mask each for manufacturing the regions of the planar transistor. Without additional photoresist masks, further semiconductor components, such as integrated resistors and/or lateral transistors are capable of being manufactured. The process is characterized by the fact that, the first photoresist mask is used to manufacture a diffusion masking layer which leaves the base area of the planar transistor unmasked. In this area, the dopings of the collector region are introduced into the substrate and the collector region is diffused. Thereafter, at a relatively small dose rate, there is carried out an implantation of dopings of the base region. Upon removal of the diffusion masking layer and by employing a second photoresist mask, an oxidation masking layer is deposited which covers both the rim portion of the collector region and the emitter area. The oxidation masking layer serves as an implantation mask for the dopings of the external base partial region and for manufacturing an implantation mask of a thermally produced silicon oxide. Through the openings in this implantation mask there is effected the implantation of the dopings of the emitter region and those of the collector connecting region.
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Hornung et al., "Direct or Implanted Contacts in Ion Implanted Resistors" IBM Tech. Disclosure Bul. vol. 21, No. 11, Apr. 1979.
Auyang Hunter L.
Hearn Brian E.
IT&T Industries, Inc.
Lenkszus Donald J.
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