Patent
1979-11-06
1981-08-25
Edlow, Martin H.
357 49, 357 59, 357 38, H01L 2704, H01L 2712
Patent
active
042862809
ABSTRACT:
A semiconductor integrated circuit device including a power element and circuit elements for controlling the power element each provided on the same dielectric isolated substrate is disclosed in which the dielectric isolated substrate comprises a semiconductor monocrystalline region extending from one principal surface of the dielectric isolated substrate to the other principal surface, a plurality of semiconductor monocrystalline islands each exposed in a part thereof to the above-mentioned one principal surface, a semiconductor polycrystalline region for supporting the monocrystalline region and the monocrystalline islands, and an insulating film provided among the polycrystalline region and the monocrystalline islands and region; and in which the power element is formed in the monocrystalline region and the circuit elements for controlling the power element are formed in the monocrystalline islands.
REFERENCES:
patent: 3648128 (1972-03-01), Kobayshi
patent: 3858237 (1974-12-01), Sawazoki
patent: 3871007 (1975-03-01), Wakamiya
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patent: 3961356 (1976-06-01), Kooi
patent: 4009484 (1977-02-01), Oguie
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patent: 4157269 (1979-06-01), Ning
patent: 4188707 (1980-02-01), Asano
Edlow Martin H.
Hitachi , Ltd.
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