Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1985-10-07
1986-11-25
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330277, 330291, 330294, H03F 138, H03F 360
Patent
active
046251790
ABSTRACT:
Space feedback comprising a shield over the tuning elements of a FET radio frequency amplifier provides positive feedback between the gate and drain terminals to raise the gain of the amplifier above what it would be without the space feedback, while simultaneously lowering the noise figure. Not only is the relative noise lowered, but the absolute amount of noise is lowered.
REFERENCES:
patent: 3999142 (1976-12-01), Presser et al.
Ulrich, "Use Negative Feedback to Slash Wideband VSWR," Microwaves, Oct. 1978, pp. 66-68, 70.
Tohyama et al, "23-GHz Band GaAs MESFET Reflection-Type Amplifier," IEEE Transactions on Microwave Theory and Techniques, vol. MTT-27, No. 5, May 1979, pp. 408-411.
Hamann H. Fredrick
Lutz Bruce C.
Mullins James B.
Rockwell International Corporation
Sewell V. L.
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