Method of electron beam exposure

Details Method of electron beam exposure Method of electron beam exposure

1985-02-22

1986-11-25

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 3730

Patent

active

046251219

ABSTRACT:
A method for improving the throughput of precision pattern generation using intermittent shots of an electron beam. The shot applied to the periphery of the region to be occupied by the pattern occurs after a relatively long blanking time starting after the directly preceding shot, while the shot applied to the inner portion of the region occurs after a relatively short blanking time starting after the directly preceding shot.

REFERENCES:
patent: 4433384 (1984-02-01), Berrian
patent: 4477729 (1984-10-01), Chang et al.
patent: 4482810 (1984-11-01), Cooke

Affiliated with

Also associated with

Rating

Method of electron beam exposure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of electron beam exposure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of electron beam exposure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1160090