MOSFET gate substrate bias sensor

Details MOSFET gate substrate bias sensor MOSFET gate substrate bias sensor

1990-12-20

1993-04-13

Sikes, William L.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307578, 307607, 307264, 307350, H03K 301, H03K 513

Patent

active

052025870

ABSTRACT:
A low current substrate bias generator for regulating the potential of a substrate layer of an integrated circuit includes a sense element having an input for sensing the potential of the substrate. The substrate bias gates a PMOS transistor connected in a source follower configuration, being serially connected to a load element at its output and connected to ground at its drain. The PMOS transistor output is a control signal. The control signal is complemented by an inverter and the complement activates a charge pump that is coupled to the substrate layer or well that is desired to be regulated. The sense element includes the PMOS transistor and the load element. The sense element does not deplete or enhance the substrate potential but only provides substrate bias sensing and a subsequent control signal for activation and deactivation of the charge pump.

REFERENCES:
patent: 4581546 (1986-04-01), Allan
patent: 5045716 (1991-09-01), Takacs et al.
IBM Tech. Disc. Bul. vol. 28 No. 3 Aug. 1985 "Voltage Regulator Circuit for CMOS Substrate Voltage Generator".

Affiliated with

Also associated with

Rating

MOSFET gate substrate bias sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOSFET gate substrate bias sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET gate substrate bias sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1157324