Method of operating a synchronous memory device

Static information storage and retrieval – Addressing – Sync/clocking

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365194, G11C 700

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active

061011525

ABSTRACT:
A synchronous memory device having a plurality of memory cells and a method of operation thereof. The memory device comprising: receiver circuitry to receive a first external clock signal; and output driver circuitry, to output data after a preprogrammed number of clock cycles of the first external clock signal transpire. The data is output synchronously with respect to the first external clock signal. The method of operation comprises: receiving a request for a read operation; sensing data in a portion of the plurality of sense amplifiers in response to the request for a read operation; and outputting the data after a preprogrammed delay time transpires. The method may further include receiving an external clock signal wherein the preprogrammed time delay is representative of a fixed number of clock cycles of the external clock signal. The data is output synchronously with respect to the first external clock signal.

REFERENCES:
patent: 4099231 (1978-07-01), Kotok et al.
patent: 4183095 (1980-01-01), Ward
patent: 4222112 (1980-09-01), Clemons et al.
patent: 4445204 (1984-04-01), Nishiguchi
patent: 4570220 (1986-02-01), Tetrick et al.
patent: 4734880 (1988-03-01), Collins
patent: 4821226 (1989-04-01), Christopher et al.
patent: 4845664 (1989-07-01), Aichelmann, Jr. et al.
patent: 4882712 (1989-11-01), Ohno et al.
patent: 4916670 (1990-04-01), Suzuki et al.
patent: 4928265 (1990-05-01), Higuchi
patent: 4951251 (1990-08-01), Yamaguchi et al.
patent: 4953128 (1990-08-01), Kawai et al.
patent: 4953130 (1990-08-01), Houston
patent: 4970418 (1990-11-01), Masterson
patent: 4975872 (1990-12-01), Zaiki
patent: 5016226 (1991-05-01), Hiwada et al.
patent: 5018111 (1991-05-01), Madland
patent: 5107465 (1992-04-01), Fung et al.
patent: 5140688 (1992-08-01), White et al.
patent: 5206833 (1993-04-01), Lee
patent: 5210715 (1993-05-01), Houston
patent: 5251309 (1993-10-01), Kinoshita et al.
patent: 5291453 (1994-03-01), Aota et al.
patent: 5301278 (1994-04-01), Bowater et al.
patent: 5485426 (1996-01-01), Lee et al.
patent: 5636173 (1997-06-01), Schaefer
patent: 5881016 (1999-03-01), Kenkare et al.
patent: 5892713 (1999-04-01), Jyouno et al.
patent: 5936903 (1999-08-01), Jeng et al.
T.L. Jeremiah et al., "SYNCHRONOUS LSSD PACKET SWITCHING MEMORY AND I/O CHANNEL," IBM Tech. Disc. Bul,. vol. 24, No. 10, pp. 4986-4987 (Mar. 1982).
L. R. Metzeger, "A 16K CMOS PROM with Polysilicon Fusible Links", IEEE Journal of Solid State Circuits, vol. 18 No. 5, pp. 562-567 (Oct. 1983).
A. Yuen et al., "A 32K ASIC Synchronous RAM Using a Two-Transistor Basic Cell", IEEE Journal of Solid State Circuits, vol. 24 No. 1, pp. 57-61 (Feb. 1989).
D.T. Wong et al., "An 11-ns 8Kx18 CMOS Static RAM with 0.5-.mu.m Devices", IEEE Journal of Solid State Circuits, vol. 23 No. 5, pp. 1095-1103 (Oct. 1988).
T. Williams et al., "An Experimental 1-Mbit CMOS SRAM with Configurable Organization and Operation", IEEE Journal of Solid State Circuits, vol. 23 No. 5, pp. 1085-1094 (Oct. 1988).
D. Jones, "Synchronous static ram", Electronics and Wireless World, vol. 93, No. 1622, pp. 1243-1244 (Dec. 1987).
F. Miller et al., "High Frequency System Operation Using Synchronous SRAMS", Midcon/87 Conference Record, pp. 430-432 Chicago, IL, USA; 15-17 Sep. 1987.
K. Ohta, "A 1-Mbit DRAM with 33-MHz Ser. I/O Ports", IEEE Journal of Solid State Circuits, vol. 21 No. 5, pp. 649-654 (Oct. 1986).
K. Nogami et al., "A 9-ns HIT-Delay 32-kbyte Cache Macro for High-Speed RISC", IEEE Journal of Solid State Circuits, vol. 25 No. 1, pp. 100-108 (Feb. 1990).
F. Towler et al., "A 128k 6.5ns Access/ 5ns Cycle CMOS ECL Static RAM", 1989 IEEE international Solid State Circuits Conference, (Feb. 1989).
M. Kimoto, "A 1.4ns/64kb RAM with 85ps/3680 Logic Gate Array", 1989 IEEE Custom Integrated Circuits Conference.
D. Wendell et al., "A 3.5ns, 2K.times.9 Self Timed SRAM", 1990 IEEE Symposium on VLSI Circuits (Feb. 1990).

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