Semiconductor device and method of making

Details Semiconductor device and method of making Semiconductor device and method of making

1980-05-19

1984-12-25

Ozaki, G.

Metal treatment

Stock

Ferrous

29571, 29576B, 148187, 357 23, 357 55, 357 88, 357 89, 357 90, 357 91, H01L 2902, H01L 21265

Patent

active

044907362

ABSTRACT:
Semiconductor devices are made by a process in which impurity is introduced, by ion implant, for example, after electrode layers are in place so that inaccuracies in alignment of masks or patterns are compensated. The implanted impurity changes the electrical characteristics of portions of the semiconductor device affected by the registration inaccuracies whereby malfunctions in the completed devices are prevented.

REFERENCES:
patent: 3752711 (1973-08-01), Kooi et al.
patent: 3936861 (1976-02-01), Borel et al.
patent: 3967365 (1976-07-01), Friedrich
patent: 4055444 (1977-10-01), Rao
patent: 4295897 (1981-10-01), Tubbs et al.
patent: 4325169 (1982-04-01), Ponder et al.
Eaggin et al., Electronics, Sep. 20, 1969, pp. 88-94.
Stein et al., IEEE J. of Solid State Circuits, vol. SC-7, No. 5, Oct. 1972, pp. 336-340.

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