Monolithic input stage of an optical receiver

Details Monolithic input stage of an optical receiver Monolithic input stage of an optical receiver

1982-08-31

1984-12-25

Edlow, Martin H.

357 41, 357 4, 357 56, 357 58, H01L 2714

Patent

active

044907354

ABSTRACT:
The present invention relates to a monolithically designed input stage for an optical receiver, the input stage comprising a PIN (more specifically a PNIN) photodiode and a connected field effect transistor. The photodiode, which includes an absorption zone of GaInAsP for the optical radiation and a pn-junction formed by InP layers, is disposed together with the field effect transistor on a common semi-insulating InP substrate.

REFERENCES:
Leheny et al., "Integrated In.sub.0.53 Ga.sub.0.47 As p-i-n F.E.T. Photoreceiver", Electronics Letters, May 8, 1980, vol. 16, No. 10, pp. 353-355.
R. C. Hooper et al., PIN-FET Hybrid Optical Receivers for Longer Wavelength Optical Communications Systems, 6th European Conference on Optical Communication, York, 1980, pp. 222-225.
D. R. Smith, et al., Receivers for Optical Communications: A Comparison of Avalanche Photodiodes with PIN-FET Hybrids, Optical and Quantum Electronics, vol. 10, 1978, pp. 293-300.
Ping-King Tien et al., Integrated Optics: Putting It All Together, Bell Laboratories Record, Feb., 1981, pp. 38-45.
H. Morkoc et al., "Schottky Barriers and Ohmic Contacts on n-Type InP Based Compound Semiconductors for Microwave FET's", IEEE Transactions on Electron Devices, Jan. 1, 1981, vol. ED-28, No. 1, pp. 1-5.
L. Messick, "InP/SiO.sub.2 MIS Structure", Journal of Applied Physics, Nov. 1976, vol. 47, No. 11, pp. 4949-4951.
M. Chu et al., "1.33-.mu.m HgCdTe/CdTe Photodiodes", Applied Physics Letters, vol. 37, No. 3, Aug. 1, 1980, pp. 318-320.
C. A. Burres, et al., InGaAsP p-i-n Photodiodes with Low Dark Current and Small Capacitance, Electronics Letters, Sep. 27th, 1979, vol. 15, No. 20, pp. 655-657.

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