DMOS With gate protection diode formed over base region

Details DMOS With gate protection diode formed over base region DMOS With gate protection diode formed over base region

1982-02-22

1985-01-08

James, Andrew J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 13, 357 41, 361 91, H01L 2978, H01L 2990, H01L 2702, H02H 320

Patent

active

044929749

ABSTRACT:
A semiconductor integrated circuit device is provided to include a vertical type MOSFET and a gate protection element for the MOSFET. The vertical type MOSFET is made up of a silicon layer of n-type conductivity formed on an n.sup.+ -type silicon substrate, a base region of p-type conductivity formed in the surface of the silicon layer of n-type conductivity, an n.sup.+ -type source region provided in the base region, and a gate electrode formed on a portion of the base region through a gate insulating film. The silicon substrate serves as the drain. The gate protection element is formed of a polycrystalline silicon layer which is provided on the base region through an insulating film and includes at least one pn junction. By virtue of forming the gate protection element over the base region rather than directly over the substrate, a more stable operation is achieved.

REFERENCES:
patent: 3728591 (1979-04-01), Sunshine
patent: 3806773 (1974-04-01), Watanabe
patent: 4062039 (1977-12-01), Nishimura
patent: 4072975 (1978-02-01), Ishitani

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