Semiconductor laser and method therefor

Details Semiconductor laser and method therefor Semiconductor laser and method therefor

1994-03-21

1995-03-21

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 14, 437129, H01S 319

Patent

active

054003520

ABSTRACT:
A semiconductor laser (10) utilizes a material having a first band gap (26) for an active layer (13) of the laser (10). Monolayers (14) of a material having a smaller band gap are positioned in the active layer (13) without substantially altering the first band gap (26). The monolayers (14) have a combined thickness that is more than approximately 15 percent of the thickness (16) of the active layer (13).

REFERENCES:
patent: 5061970 (1991-10-01), Goronkin et al.
patent: 5172384 (1992-12-01), Goronkin et al.
patent: 5270225 (1993-12-01), Goronkin et al.
patent: 5286982 (1994-02-01), Ackley et al.
patent: 5289013 (1994-02-01), Goronkin et al.

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