Process for manufacture of quantum dot and quantum wire semicond

Details Process for manufacture of quantum dot and quantum wire semicond Process for manufacture of quantum dot and quantum wire semicond

1991-12-02

1993-04-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437234, 437967, 437 98, 437 99, 148DIG122, H01L 2100, H01L 2102, H01L 2120, H01L 21205

Patent

active

052022900

ABSTRACT:
Quantum dot and quantum wire semiconductors in the nanosize range are produced by a process which utilizes a microporous aluminum oxide surface layer on an aluminum metal substrate as a template for the semiconducting material. The microporous surface layer is prepared by anodizing an aluminum substrate in an acid bath. Then a metal capable of forming a semiconductor compound is electrodeposited into the surface micropores, the oxide is partially or wholly etched away, and the deposited metal is reacted with a liquid or gaseous reagent to convert it chemically to a semiconducting compound. By the process of the invention, there are produced quantum dot or quantum wire semiconductors in the form of an array of substantially mutually parallel, substantially uniform-sized rods of semiconductor material protruding from an electrically conductive substrate, each rod having a diameter less than 100 nanometers.

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Randall et al., "Advances in the Processing of Quantum Coupled Devices", SPIE, vol. 1284, (1990) pp. 66-74.

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