Injection laser with at least one pair of monoatomic layers of d

Details Injection laser with at least one pair of monoatomic layers of d Injection laser with at least one pair of monoatomic layers of d

1991-01-04

1991-10-22

Munson, Gene M.

Coherent light generators

Particular active media

Semiconductor

357 4, 357 16, 357 17, H01S 319, H01L 29205, H01L 3300, H01L 4500

Patent

active

050602349

ABSTRACT:
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is injection laser in which case the Dirac-delta doped layers 45 and 46 are within intrinsic layer 43. The injection laser is constructed with a hetero structure.

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