Method of manufacturing a vertical semiconductor device

Details Method of manufacturing a vertical semiconductor device Method of manufacturing a vertical semiconductor device

1991-07-12

1993-04-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 21, 437 50, 148DIG150, H01L 2186

Patent

active

052022730

ABSTRACT:
A semiconductor device comprises a first electrode buried in one main face of a substrate and surrounded by a first insulator, a field oxide film covering the surface of the first electrode, a semiconductor layer connected with the first electrode, a second insulator covering the surface of the semiconductor layer, a second electrode connected with the semiconductor layer, a gate electrode connected with the semiconductor layer between the second insulator and the field oxide film, and an outgoing electrode connected with the first electrode.

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