Method of making a memory device by packaging two integrated cir

Details Method of making a memory device by packaging two integrated cir Method of making a memory device by packaging two integrated cir

1990-09-19

1992-01-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437211, 437205, 437 51, H01L 2156, H01L 2158, H01L 2160

Patent

active

050828029

ABSTRACT:
A pair of like, semiconductor integrated circuit dies, such as DRAMS, have second level bonding pads formed over their active surfaces in mirror images of one another. The dies then become bonded to opposite sides of frame bonding pads of a lead frame to double the capacity of a normally encapsulated integrated circuit. The normal die bonding pads of the circuit dies are arranged identical to one another, and a patterned and etched second level of metal forms second level lands over the die bonding pads, the mirror image second level bonding pads and second level leads connecting corresponding second level lands to second level pads. A pair of 256K DRAMS can be connected either 256K.times.2 or 512K.times.1 by use of dummy second level pads for DATA-IN/OUT and ROW ADDRESSES STROBE connections.

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