Nonvolatile memory and a method of writing data thereto

Details Nonvolatile memory and a method of writing data thereto Nonvolatile memory and a method of writing data thereto

1993-07-12

1995-03-21

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

365218, G11C 1140

Patent

active

054002800

ABSTRACT:
The present invention provides a nonvolatile memory and a method of writing data thereto. The nonvolatile memory includes a memory cell having a semiconductor substrate, a first electrode on the substrate formed through the intermediary of an insulating film, a floating gate adjacent to the first electrode formed through the intermediary of an insulating film, and a second electrode deposited at least on the floating gate through the intermediary of an insulating film, wherein a plurality of the memory cells are arranged in the directions of X and Y to form a matrix, at least 2 memory cells arranged in the direction of X form a memory cell group, a single first impurity diffused layer and a single second impurity diffused layer used in common in the respective cells are formed at the both ends of the memory cell group, and the first electrode and the second electrode of the plurality of memory cells arranged in the direction of Y are connected in common.

REFERENCES:
patent: 4924438 (1990-05-01), Kobatake
patent: 5088060 (1992-02-01), Endoh
patent: 5278439 (1994-01-01), Ma
patent: 5278794 (1994-01-01), Tanaka

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