Method of fabricating a field effect semiconductor device having

Details Method of fabricating a field effect semiconductor device having Method of fabricating a field effect semiconductor device having

1988-11-01

1992-01-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 6, 437203, 357 234, H01L 21266, H01L 21467

Patent

active

050827952

ABSTRACT:
A self aligned method of fabricating a vertical channel insulated gate semiconductor device comprises providing a first layer of one type conductivity atop a partially processed wafer. A first protective layer is disposed over the first layer and a window is opened therethrough. A first region can be established through the first window and in the first layer. A trench is established through the first window, and extending entirely through the first region and first layer, into the partially processed wafer. An insulated gate is established in the trench to control the drift region electric field under reverse bias operation.

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