1977-04-20
1979-01-30
Edlow, Martin H.
357 3, 357 58, 357 88, H01L 29161
Patent
active
041375424
ABSTRACT:
A semiconductor structure may be fabricated that confines current flow to two dimensions by constructing as a structure a body of alternate regions of different semiconductor materials with current flow parallel to the intersections of the regions. The structure, in device form, exhibits the properties of selectable energy gap, higher carrier mobility and increased electronic density of states. Such devices are usable for their bulk properties, their junction electro-optical properties and their junction transistor properties.
REFERENCES:
patent: 3469154 (1969-09-01), Scholer
patent: 3626257 (1971-12-01), Esaki
patent: 3626328 (1971-12-01), Esaki
patent: 3882533 (1975-05-01), Dohler
patent: 3893148 (1975-07-01), Madjid
Chang et al., Appl. Phys. Lett., vol. 24, No. 12, 15 Jun. 74, pp. 593-595.
Rideout, IBM Tech. Discl. Bull., vol. 13, No. 11, Apr. 1971.
Chang Leroy L.
Esaki Leo
Edlow Martin H.
International Business Machines - Corporation
Riddles Alvin J.
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