Method for making solid state device utilizing ion implantation

Details Method for making solid state device utilizing ion implantation Method for making solid state device utilizing ion implantation

1989-11-17

1992-01-21

Saba, William G.

Fishing, trapping, and vermin destroying

148DIG76, 148DIG83, 148DIG85, 148DIG117, 357 49, 357 50, 357 91, 437 26, 437 63, 437 64, 437 69, H01L 21265, H01L 2120

Patent

active

050827936

ABSTRACT:
A method of making a dielectric isolation integrated circuit structure in which dielectric material grooves formed by ion implantation extend down into the structure and intersect a PN junction or other active region at intersection lines such that each intersection line is within microns both laterally from the center of the groove and vertically from the bottom of the groove and the grooves continuously curve at least at the intersection lines at a radius of curvature less than 1 cm.

REFERENCES:
patent: 3534234 (1970-10-01), Clevenger
patent: 3586542 (1971-06-01), MacRae
patent: 3622382 (1971-11-01), Brack
patent: 3648125 (1972-03-01), Peltzer
patent: 3649386 (1972-03-01), Murphy

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