Silicon carbide barrier layers for porous low dielectric constan

Details Silicon carbide barrier layers for porous low dielectric constan Silicon carbide barrier layers for porous low dielectric constan

1999-08-26

2000-08-08

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257753, 257759, 257774, 438627, 438637, 438623, 438628, 438644, 438643, H07L 23485, H01L 214763

Patent

active

061005878

ABSTRACT:
Interconnects in porous dielectric materials are coated with a SiC-containing material to inhibit moisture penetration and retention within the dielectric material. Specifically, SiC coatings doped with boron such as SiC(BN) show particularly good results as barrier layers for dielectric interconnects.

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