Modulation doped field effect transistor

Details Modulation doped field effect transistor Modulation doped field effect transistor

1994-05-03

1995-03-21

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257192, 257280, 257285, H01L 29161, H01L 29205, H01L 29225

Patent

active

053998871

ABSTRACT:
A modulation doped field effect transistor (10) is formed to have a drain (28, 12, 11) that is vertically displaced from the source (16, 17) and channel (20, 21) regions. The transistor (10) has the source (16, 17), channel (20, 21) and a portion of the drain (28) arranged laterally so that current (27) flows from the source (16, 17) laterally to the drain (28, 12, 11). A heterojunction layer (18) on the channel region (20, 21) facilitates forming a two dimensional electron gas in the channel (20, 21) region which provides the transistor (10) with a high transconductance.

REFERENCES:
patent: 4710788 (1987-12-01), Dambkes et al.
patent: 4805003 (1989-02-01), Holm et al.
patent: 5077589 (1991-12-01), Holm et al.
patent: 5323030 (1994-06-01), Koscica et al.
patent: 5334865 (1994-08-01), Fathimulla et al.

Affiliated with

Also associated with

Rating

Modulation doped field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Modulation doped field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modulation doped field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1151007