Tunable semiconductor diode laser with distributed reflection

Coherent light generators – Particular active media – Semiconductor

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372 96, 372 20, H01S 319

Patent

active

049950487

ABSTRACT:
A tunable semiconductor diode laser with distributed reflection (DBR semiconductor laser) having a wide wavelength range is a suitable transmitter or local oscillator in a receiver in heterodyne and coherent optical glass fiber communication systems. Such a diode includes, in addition to the Bragg section in which the Bragg reflection takes place, an active section in which the radiation-emitting active region is present. When such a semiconductor diode laser is further provided with a so-called phase section, tuning is possible over a large wavelength range within one oscillation mode. A laser which is continuously tunable over the whole wavelength range is obtained by provided a mechanism by which the intensity of radiation which is reflected at the junction between the active section and the phase section is made low with respect to the intensity of the radiation which returns from the phase section to the active section.

REFERENCES:
patent: 4719636 (1988-01-01), Yamaguchi
patent: 4751710 (1988-06-01), Yamaguchi et al.
patent: 4813054 (1989-03-01), Plumb
patent: 4885753 (1989-12-01), Okai et al.
patent: 4920542 (1990-04-01), Brosson et al.

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