Process for producing a semiconductor device by vapor growth of

Details Process for producing a semiconductor device by vapor growth of Process for producing a semiconductor device by vapor growth of

1976-12-09

1979-01-30

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 156610, 156612, 156614, 357 49, 357 50, 357 54, 423625, 423630, H01L 21205, H01L 2176, H01L 2186

Patent

active

041371089

ABSTRACT:
A single crystal of Al.sub.2 O.sub.3 is epitaxially grown on an Si-single crystal of a semiconductor device by a vapor growth method. This vapor growth method employs starting materials of HCl, Al and CO.sub.2. Further, this method advantageouslyemploys a carrier gas to carry the gaseous product of the reaction of HCl with Al. An apparatus for the production of the above-mentioned semiconductor device comprises a chamber means for the reaction of the gaseous product and the single crystal, a reaction chamber for the reaction of Al and HCl, and an introducing tube for introducing CO.sub.2 in the proximity of the Si-single crystal.

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Chemical Abstracts, vol. 74, 1971, pp. 376-377, Abstract No. 147232p.
Wong et al., "Epitaxial Growth of Aluminum oxide . . .".
Tietjen et al., "Vapor Phase Growth. . .Semiconductors" Solid State Tech., Oct., 1972, pp. 42-49.
Hall et al., "Properties of Aluminum Oxide Films . . ." J. Electrochem. Soc., vol. 118, No. 10, Oct. 1971, pp. 1624-1626.

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