Method of controlling leakage currents and reverse recovery time

Details Method of controlling leakage currents and reverse recovery time Method of controlling leakage currents and reverse recovery time

1977-07-11

1979-01-30

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 250492A, 357 29, 357 91, H01L 21263

Patent

active

041370996

ABSTRACT:
High speed semiconductor rectifiers are fabricated by providing a rectifier, increasing the temperature thereof to a relatively high value, irradiating the rectifier with high energy lattice-damage causing particles while maintaining the relatively high temperature, and annealing the irradiated rectifier at a temperature and for a time sufficient to decrease the leakage current of the rectifier to a low value without substantially increasing the reverse recovery time of the rectifier.

REFERENCES:
patent: 3888701 (1975-06-01), Tarneja et al.
patent: 3894890 (1975-07-01), Bauerlein et al.
patent: 3933527 (1976-01-01), Tarneja et al.
patent: 4043836 (1977-08-01), Sun
patent: 4047976 (1977-09-01), Bledsoe et al.
patent: 4056408 (1977-11-01), Bartko et al.
P. Rai-Choudhury et al., "Electron Irradiation . . . in Carrier Life-Time Control", IEEE, vol. ED-23, (1976) Aug. 814.
Bemski et al., "Annealing of Electron Bombardment Damage in Si Crystals," Phys. Rev. 108 (1957) 645.

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