Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Semiconductor thin film device or thin film electric...
Patent
1992-11-30
1995-03-21
Saadat, Mahshid
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Semiconductor thin film device or thin film electric...
257 35, 257 39, 505191, 505237, 505238, 505701, H01B 1200, H01L 3922, B05D 512
Patent
active
053995465
ABSTRACT:
A superconducting device comprises a substrate, a non-superconducting layer formed in a principal surface of said substrate, an extremely thin superconducting channel formed of an oxide superconductor thin film on the non-superconducting layer. A superconducting source region and a superconducting drain region of a relatively thick thickness are formed of the oxide superconductor at the both sides of the superconducting channel separated from each other but electrically connected through the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device further includes a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the superconducting channel is connected to the superconducting source region and the superconducting drain region at the higher portions than their one third height portions.
REFERENCES:
patent: 5087605 (1992-02-01), Hegde et al.
Mannhart, J. et al., "Electric Field Effect on Superconducting YBa.sub.2 Cu.sub.3 O.sub.7 -.delta. Films", Zeitschrift Fur Physik B, vol. 83, No. 3: pp. 307-311 (1991).
Levy, A. et al., "Field-effect Conductance of YBa.sub.2 Cu.sub.3 O.sub.6 ", Journal of Applied Physics, vol. 69, No. 8: pp. 4439-4441, 15 Apr. 1991.
Iiyama Michitomo
Nakamura Takao
Saadat Mahshid
Sumitomo Electric Industries Ltd.
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