Fishing – trapping – and vermin destroying
Patent
1993-03-25
1995-03-21
Quach, T. N.
Fishing, trapping, and vermin destroying
437190, 437195, 437200, 156628, 156643, 148DIG15, H01L 21265, H01L 21283
Patent
active
053995279
ABSTRACT:
A lower wiring layer is formed on an insulating film 12 covering a semiconductor substrate 10. The wiring layer 14 has a laminated structure of a barrier metal layer such as Wsi.sub.2, an Al or Al alloy layer, and a cap metal layer such as WSi.sub.2 formed in this order from the bottom. The cap metal layer is caused to contain conductive material such as Al by using an ion injection method or the like. After forming an insulating film covering the wiring layer, a contact hole is formed in the insulating film by a dry etching process using a resist layer as a mask. The dry etching process uses a fluorine based gas such as CHF.sub.3 as the etching gas. With this etching gas, fluoride such as Al fluoride (AlF.sub.3) is generated to suppress the etching of the cap metal layer.
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Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, Sunset Beach, Calif., 1990, pp. 264, 268-272.
Guggina, W. H., et al, "Characterization of GaAs/Al Ga As selective reactive ion etching . . . ", J. Vac. Sci. Technol. B8(6), Nov./Dec. 1990.
Quach T. N.
Yamaha Corporation
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