Method of manufacturing semiconductor device by forming barrier

Details Method of manufacturing semiconductor device by forming barrier Method of manufacturing semiconductor device by forming barrier

1992-06-24

1995-03-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437200, 437 31, 148DIG105, H01L 2148

Patent

active

053995260

ABSTRACT:
A method of manufacturing a semiconductor device which comprises steps of forming a diffusion region to a semiconductor substrate; forming silicon compound film on the diffusion region; forming a metal film on the silicon compound film to form a metal silicide film and, further forming an interlayer film; forming a barrier metal material film on the interlayer film; then patterning the barrier metal material film to obtain a barrier metal layer, subsequently; patterning the interlayer film to form a contact hole and burying a wiring material into the contact hole thereby forming a wiring.

REFERENCES:
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4701349 (1987-10-01), Koyanagi et al.
patent: 4745089 (1988-05-01), Orban
patent: 4866009 (1989-09-01), Matsuda
patent: 5063168 (1991-11-01), Vora
patent: 5162259 (1992-11-01), Kolar et al.
patent: 5194405 (1993-03-01), Sumi et al.
Travis et al, "A Scalable Submicron Contact Technology Using Conformal LPCVC TiN", IEDM 90 (IEEE) (Apr. 1990) pp. 47-50.
Yoshida et al, "Thermally Stable, Low-Leakage Self-Aligned Titanium Silicide Junctions", J. Electrochem. Soc., vol. 137, No. 6, Jun. 1990, pp. 1914-1917.
Semiconductor World, May 1984, pp. 49-53, H. Okabayashi, et al. "Lateral Diffusion Through Silicide".
Sumi et al, "New Silicidation Technology by SITOX (Silicidation Through Oxide) and Its Impact on Sub-half Micron MOS Devices", IEDM 90 (IEEE (Apr. 1990), pp. 249-252.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device by forming barrier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device by forming barrier , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device by forming barrier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1148832